Nonvolatile memory devices having a three dimensional structure

ABSTRACT

Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 U.S.C. §119 to Korean PatentApplication No. 10-2009-0031368, filed on Apr. 10, 2009, the contents ofwhich are herein incorporated by reference in their entirety.

BACKGROUND OF THE INVENTIVE CONCEPT

1. Field

The present inventive concept relates to nonvolatile memory devices, andmore particularly, to nonvolatile memory devices having a threedimensional structure having high integration without increasing a sizeof a cell array.

2. Description of the Related Art

Generally, nonvolatile memory devices can electrically erase and programdata, and can retain their stored data even when their power suppliesare interrupted. For this reason, the nonvolatile memory devices arebeing widely used in various fields.

Nonvolatile memory devices include various types of memory celltransistors and are classified into a NAND-type and a NOR-type accordingto a cell array structure. A NAND-type nonvolatile memory device has anadvantage of high integration and a NOR-type nonvolatile memory devicehas an advantage of high speed.

In particular, since the NAND-type nonvolatile memory device has a cellstring structure serially connecting a plurality of memory celltransistors, it provides the advantage of high integration. Also, sincethe NAND-type nonvolatile memory device adopts an operation method ofsimultaneously changing data stored in a plurality of memory celltransistors, a speed of updating data is high compared with the NOR-typenonvolatile memory device. The NAND-type nonvolatile memory device ismainly used in a portable device which requires a mass storage devicesuch as a digital camera or a MP3 player because of high integration andhigh speed of updating data.

Studies for promoting and improving the advantages of the NAND-typenonvolatile memory device have been performed and as a part of thesestudies, NAND-type nonvolatile memory devices having three dimensionalstructures have been developed.

SUMMARY OF THE INVENTIVE CONCEPT

Exemplary embodiments of the inventive concept provide a nonvolatilememory device having a three dimensional structure. According to oneaspect of the present inventive concept, a nonvolatile memory device mayinclude cell arrays having a plurality of conductive patterns having aline shape three dimensionally arranged on a semiconductor substrate,the cell arrays being separated from one another; semiconductor patternsextending from the semiconductor substrate to cross sidewalls of theconductive patterns; common source regions provided in the semiconductorsubstrate under a lower portion of the semiconductor patterns in adirection in which the conductive patterns extend; a first impurityregion provided in the semiconductor substrate so that the firstimpurity region extends in a direction crossing the conductive patternsto electrically connect the common source regions; and a first contacthole exposing a portion of the first impurity region between theseparated cell arrays.

In one exemplary embodiment, a distance between the separated cellarrays is greater than a distance between separated conductive patterns.

In one exemplary embodiment, the first impurity region has the sameconductivity type as the common source regions.

In one exemplary embodiment, the nonvolatile memory device furtherincludes a contact plug filling the first contact hole and a commonsource line provided in a direction in which the first impurity regionextends or in a direction crossing the impurity region while beingelectrically connected to the contact plug.

In one exemplary embodiment, the nonvolatile memory device furtherincludes a second impurity region which is separated from the firstimpurity region and provided between the separated cell arrays. Thesecond impurity region has a different conductivity type from the firstimpurity region. In another exemplary embodiment, the nonvolatile memorydevice further includes a second contact hole exposing a portion of thesecond impurity region.

Embodiments of the inventive concept also provide another nonvolatilememory device having a three dimensional structure. According to anotheraspect of the inventive concept, a nonvolatile memory device may includecell arrays having conductive patterns of a flat shape that aresequentially stacked on a semiconductor substrate, the cell arrays beingseparated from one another; semiconductor patterns vertically extendingfrom the semiconductor substrate to penetrate the conductive patterns; acommon source region provided on an entire surface of the semiconductorsubstrate; and a first contact hole exposing a portion of the commonsource region between the separated cell arrays.

In one exemplary embodiment, each area of the conductive patternsdecreases as the conductive patterns extend in a stacked direction fromthe semiconductor substrate.

In one exemplary embodiment, the nonvolatile memory device furtherincludes a contact plug filling the first contact hole and a commonsource line provided in a direction in which the cell arrays extend orin a direction crossing the cell arrays while being electricallyconnected to the contact plug.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages of the inventive conceptwill be apparent from the more particular description of preferredaspects of the inventive concept, as illustrated in the accompanyingdrawings in which like reference characters refer to the same partsthroughout the different views. The drawings are not necessarily toscale, emphasis instead being placed upon illustrating the principles ofthe inventive concept. In the drawings, the thickness of layers andregions are exaggerated for clarity.

FIG. 1 is a circuit diagram of a nonvolatile memory device, inaccordance with exemplary embodiments of the present inventive concept.

FIGS. 2A and 2E are top plan views illustrating nonvolatile memorydevices, in accordance with an exemplary embodiment of the presentinventive concept.

FIGS. 2B, 2C and 2D are cross-sectional views taken along the linesI-I′, II-II′ and III-III′ of FIG. 2A, respectively.

FIGS. 3A and 3D are top plan views illustrating nonvolatile memorydevices, in accordance with another exemplary embodiment of the presentinventive concept.

FIGS. 3B and 3C are cross-sectional views taken along the lines IV-IV′and V-V′ of FIG. 3A, respectively.

FIG. 4 is a block diagram illustrating an example of a memory systemincluding a nonvolatile memory device, in accordance with exemplaryembodiments of the present inventive concept.

FIG. 5 is a block diagram illustrating an example of a memory cardincluding a nonvolatile memory device, in accordance with exemplaryembodiments of the present inventive concept.

FIG. 6 is a block diagram illustrating an example of a data processingsystem including a nonvolatile memory device, in accordance withexemplary embodiments of the present inventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Preferred embodiments of the inventive concept will be described belowin more detail with reference to the accompanying drawings. Theembodiments of the inventive concept may, however, be embodied indifferent forms and should not be constructed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the inventive concept to those skilled in the art.Like numbers refer to like elements throughout.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the inventiveconcept. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” or “includes” and/or “including” whenused in this specification, specify the presence of stated features,regions, integers, steps, operations, elements, and/or components, butdo not preclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

In the drawings, the thickness of layers and regions are exaggerated forclarity. It will also be understood that when an element such as alayer, region or substrate is referred to as being “on” or “onto”another element, it may lie directly on the other element or interveningelements or layers may also be present.

Embodiments of the inventive concept may be described with reference tocross-sectional illustrations, which are schematic illustrations ofidealized embodiments of the present inventive concept. As such,variations from the shapes of the illustrations, as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, embodiments of the present inventive concept should notbe construed as limited to the particular shapes of regions illustratedherein, but are to include deviations in shapes that result from, e.g.,manufacturing. For example, a region illustrated as a rectangle may haverounded or curved features. Thus, the regions illustrated in the figuresare schematic in nature and are not intended to limit the scope of thepresent inventive concept.

FIG. 1 is a circuit diagram of a nonvolatile memory device, inaccordance with exemplary embodiments of the present inventive concept.

Referring to FIG. 1, a nonvolatile memory device, in accordance with anembodiment of the present inventive concept, includes a cell arrayincluding a plurality of strings STR. The cell array includes bit linesBL1-BL3, word lines WL1-WL4, upper selection lines USL1-USL3, a lowerselection line LSL and a common source line CSL. The cell array includesthe plurality of strings STR between the bit lines BL1-BL3 and thecommon source line CSL.

Each string STR includes an upper selection transistor UST, a lowerselection transistor LST and a plurality of memory cell transistors MCserially connected between the upper and lower selection transistors USTand LST. Drains of the upper selection transistors UST are connected tothe bit lines BL1-BL3 and sources of the lower selection transistors LSTare connected to the common source line CSL. The common source line CSLis a line to which the lower selection transistors LST are commonlyconnected.

Also, the upper selection transistors UST are connected to the upperselection lines USL1-USL3 and the lower selection transistors LST areconnected to the lower selection line LSL. The memory cell transistorsMC are connected to the word lines WL1-WL4.

The cell array is arranged in three dimensions and the strings STR havea structure in which memory cell transistors MC are serially connectedto one another in a Z-axis direction perpendicular to an X-Y plane andparallel to an upper surface of a substrate. Thus, channels of the upperand lower selection transistors UST and LST and the memory celltransistors MC may be vertically provided in the X-Y plane.

In a nonvolatile memory device having a three dimensional structure, mnumber of memory cells may be provided to each X-Y plane, and the X-Yplane having the m number of the memory cells may be stacked n number oftimes in the Z-axis direction. Here, m and n are natural number.

FIGS. 2A and 2E are top plan views illustrating nonvolatile memorydevices, in accordance with an exemplary embodiment of the presentinventive concept. FIGS. 2B, 2C and 2D are cross-sectional views takenalong the lines I-I′, II-If and III-III′ of FIG. 2A, respectively.

Referring to FIGS. 2A through 2E, a first cell array 130 a and a secondcell array 130 b that are separated from each other may be disposed on asemiconductor substrate 110. The first and second cell arrays 130 a and130 b may be structures in which an insulating layer and a conductivelayer are alternately disposed on the semiconductor substrate 110.

More specifically, the insulating layer includes insulating layerpatterns 120 of a line shape and the conductive layer includes gateelectrodes 130, for example word lines, of a line shape. The insulatinglayer patterns 120 and the gate electrodes 130 are alternately stackedon the semiconductor substrate 110 to form a stacked structure of a lineshape. The insulating layer patterns 120 and the gate electrodes 130 maybe disposed to be separated from each other on the same layer. That is,the gate electrodes 130 may be three dimensionally arranged on thesemiconductor substrate 110. The gate electrodes 130 three dimensionallyarranged on the semiconductor substrate 110 may be, for example, a polycrystal semiconductor layer formed through an epitaxial growth process.Alternatively, the gate electrodes 130 may be, for example, a metallayer formed through a plating process.

First sidewalls of stacked structures in which the insulating layerpatterns 120 and the gate electrodes 130 are alternately stacked may besymmetrically disposed to be separated from each other. That is, thefirst sidewalls of the adjacent stacked structures may be disposed toface each other.

Semiconductor patterns 140 which are provided to be a channel aredisposed between the first sidewalls of the stacked structures in whichthe insulating layer patterns 120 and the gate electrodes 130 arealternately stacked. The semiconductor patterns 140 extend in adirection perpendicular to the semiconductor substrate 110 and aplurality of the gate electrodes 130 cross a sidewall of each of thesemiconductor patterns 140. The semiconductor patterns 140 extending inthe direction perpendicular to the semiconductor substrate 110 areelectrically connected to bit lines 170 crossing the gate electrodes130. The bit lines 170 may be directly in contact with upper surfaces ofthe semiconductor patterns 140 or may be electrically connected to thesemiconductor patterns 140 through bit line contacts 160.

The first and second cell arrays 130 a and 130 b which are outside ofthe illustrated region may have a structure in which the insulatinglayer patterns 120 and the gate electrodes 130 are stacked in a stairshape in an extending direction of the first and second cell arrays 130a and 130 b. The structure of the stair shape may be for obtaining aspace for electrically connecting a word line selection line to each ofthe gate electrodes 130.

An insulating layer 150 may be provided between second sidewalls of thestacked structures in which the insulating layer patterns 120 and thegate electrodes 130 are alternately stacked. Also, the insulating layer150 may be provided between the first and second cell arrays 130 a and130 b which are separated from each other. Although not illustrated inthe drawings, if the semiconductor patterns 140 are thinly providedbetween the first sidewalls of the stacked structures such that twosemiconductor patterns are provided to be channels, an insulating layermay be provided between the two semiconductor patterns. A charge storagelayer (not illustrated) may be disposed between the semiconductorpatterns 140 and first sidewalls of the gate electrodes 130. The chargestorage layer may include a charge tunneling layer, a charge trappinglayer and a charge blocking layer. The charge tunneling layer may be incontact with the semiconductor patterns 140 for a channel and the chargeblocking layer may be in contact with the gate electrodes 130.

Common source regions 112 may be provided in the semiconductor substrate110 under the semiconductor patterns 140 in a direction in which thegate electrodes 130 extend. That is, the common source regions 112 maybe provided between the gate electrodes 130 which are separated fromeach other in a direction horizontal to the semiconductor substrate 110.Thus, the common source regions 112 may not be provided to the wholesemiconductor substrate 110, but may be provided to a portion of thesemiconductor substrate 110.

Common source line strapping regions 113 which extend in a directioncrossing the gate electrodes 130 to electrically connect the commonsource regions 112 to one another may be provided in the semiconductorsubstrate 110. A conductivity type of the common source line strappingregions 113 may be identical to the common source regions 112.Accordingly, the common source regions 112 are electrically connected toone another by the common source line strapping regions 113 and therebythe common source regions 112 may be concurrently operated by a voltageapplied to the common source line strapping regions 113.

A well region 114 may be provided in a portion of the semiconductorsubstrate 110 which is separated from the common source regions 112 anddisposed between the first and second cell arrays 130 a and 130 b whichare separated from each other. The well region 114 may have a differentconductivity type from the common source line strapping regions 113.

Contact holes 190 exposing a portion of each of the common source linestrapping regions 113 and a portion of the well region 114 are providedto the semiconductor substrate 110 between the first and second cellarrays 130 a and 130 b which are separated from each other. A separateddistance between the first and second cell arrays 130 a and 130 b may begreater than a separated distance between the stacked structures of aline shape. Thus, a process margin for forming the contact holes 190 maybe sufficiently obtained.

Contact plugs 191 filling the contact holes 190 are provided. Commonsource lines 170S and a well line 170W electrically connected to thecontact plugs 191 and running in a major axis direction which is anextending direction of the common source line strapping region 113 maybe provided on the contact plugs 191. The common source lines 170S andthe well line 170W may be provided to be parallel to the bit lines 170.Thus, the bit lines 170, the common source lines 170S and the well line170W may be formed by one process. Alternatively, the common sourcelines 1705 and the well line 170W may be provided on the contact plugs191 while they are electrically connected to the contact plugs 191 inparallel to an extending direction of the gate electrodes 130 (see FIG.2E). In this alternative embodiment, the common source lines 170S andthe well line 170W running in the major axis direction which is theextending direction of the common source line strapping region 113described above may not be provided or may be provided as dummy bitlines for convenience of a manufacturing process.

FIGS. 3A and 3D are top plan views illustrating nonvolatile memorydevices, in accordance with another exemplary embodiment of the presentinventive concept. FIGS. 3B and 3C are cross-sectional views taken alongthe lines IV-IV′ and V-V′ of FIG. 3A, respectively.

Referring to FIGS. 3A through 3D, a first cell array 230 a and a secondcell array 230 b which are separated from each other may be disposed ona semiconductor substrate 210. The first cell array 230 a and the secondcell array 230 b may be structures in which an insulating layer and aconductive layer are alternately stacked on the semiconductor substrate210.

More specifically, the insulating layer includes insulating layerpatterns 220 and the conductive layer includes word lines 230 of a plateshape. The insulating layer patterns 220 and the word lines 230 arealternately stacked on the semiconductor substrate 110 to form a stackedstructure of a plate shape. That is, the word lines 230 may be threedimensionally arranged on the semiconductor substrate 210. The wordlines 230 three dimensionally arranged on the semiconductor substrate210 may be, for example, a poly crystal semiconductor layer formedthrough an epitaxial growth process. Alternatively, the word lines 230may be, for example, a metal layer formed through a plating process.

The first and second cell arrays 230 a and 230 b which are outside ofthe illustrated region may have a structure in which the insulatinglayer patterns 220 and the word lines 230 are stacked in a stair shapein an extending direction of the first and second cell arrays 230 a and230 b. The structure of the stair shape may be for obtaining a space forelectrically connecting a word line selection line to each of the wordlines 230. Accordingly, each area of the word lines 230 may becomenarrow as the word lines 230 extend in a stacked direction from thesemiconductor substrate 210.

Semiconductor patterns 265 provided for a channel vertically extendingfrom the semiconductor substrate 210 to penetrate the word lines 230 maybe provided to a position at which the word lines 230 are superposed inthe stacked direction. The semiconductor patterns 265 are electricallyconnected to bit lines 270 crossing the word lines 230. The bit lines270 may be directly in contact with upper surfaces of the semiconductorpatterns 265 or may be electrically connected to the semiconductorpatterns 265 through bit line contacts.

An insulating layer 250 may be provided between the first and secondcell arrays 230 a and 230 b which are separated from each other.Although not illustrated in the drawings, if the semiconductor patterns265 are thinly provided to inner sides of the penetrated word lines 230to have a cylinder shape, an insulating layer may also be provided tothe inside of the semiconductor patterns 265. A charge storage layer(not illustrated) may be disposed between the semiconductor patterns 265and the word lines 230. The charge storage layer may include a chargetunneling layer, a charge trapping layer and a charge blocking layer.The charge tunneling layer is in contact with the semiconductor patterns265 and the charge blocking layer is in contact with the word lines 230.

A common source region 212 may be provided on an entire surface of thesemiconductor substrate 210. Contact holes 290 exposing a portion of thecommon source region 212 provided on the semiconductor substrate 210between the first and second cell arrays 230 a and 230 b which areseparated from each other are provided.

Contact plugs 291 filling the contact holes 290 are provided. Commonsource lines 270S electrically connected to the contact plugs 291 andrunning in a direction crossing the first and second cell arrays 230 aand 230 b may be provided on the contact plugs 291. The common sourcelines 270S may be provided to be parallel to the bit lines 270. Thus,the bit lines 270 and the common source lines 270S may be formed by oneprocess. Alternatively, the common source line 270S may be provided onthe contact plugs 291 while it is electrically connected to the contactplugs 291 in parallel to an extending direction of the word lines 230(see FIG. 3D). In this alternative embodiment, the common source lines270S running in a direction crossing the first and second cell arrays230 a and 230 b described above may not be provided or may be providedas dummy bit lines for convenience of a manufacturing process.

Word lines of a nonvolatile memory device having a three dimensionalstructure may be formed without disconnection by using a space betweencell arrays separated from each other for strapping of a common sourceregion and/or a well region in accordance with embodiments of thepresent inventive concept. Accordingly, a more simple process and asmaller space may be needed in accordance with the present inventiveconcept compared with a process and a space for strapping of a commonsource region and a well region having a conventional structure of threedimensions. Also, since a predetermined separated space between the cellarrays which are separated from each other is used as a strappingregion, the same space may be needed in a nonvolatile memory devicehaving a three dimensional structure stacked with more cells to increasedensity of a cell.

FIG. 4 is a block diagram illustrating an example of a memory systemincluding a nonvolatile memory device, in accordance with exemplaryembodiments of the present inventive concept.

Referring to FIG. 4, a memory system 1100 may be applied to, forexample, a personal digital assistant (PDA), a portable computer, a webtablet, a wireless phone, a mobile phone, a digital music player, amemory card or all devices which can transmit and/or receive data in awireless environment.

The memory system 1100 includes a controller 1110, an input/outputdevice 1120 such as a key pad, a key board and a display, a memory 1130,an interface 1140 and a bus 1150. The memory 1130 and the interface 1140communicate with each other through the bus 1150.

The controller 1110 includes a microprocessor, a digital signalprocessor, a microcontroller or other process devices similar to themicroprocessor, the digital signal processor and the microcontroller.The memory 1130 may be used to store commands executed by the controller1110. The input/output device 1120 can receive data from the outside ofthe memory system 1100 or transmit data to the outside of the memorysystem 1100. For example, the input/output device 1120 may include a keyboard, a key pad or a display.

The memory 1130 includes a nonvolatile memory device, in accordance withexemplary embodiments of the present inventive concept, as described inconnection with FIGS. 2A-2D and FIGS. 3A-3C. The memory 1130 may furtherinclude a different kind of a memory, for example, a volatile memorywhich can randomly access data and various other kinds of memories.

The interface 1140 transmits data to a communication network or receivesdata from a communication network.

FIG. 5 is a block diagram illustrating an example of a memory cardincluding a nonvolatile memory device, in accordance with exemplaryembodiments of the present inventive concept.

Referring to FIG. 5, a memory card 1200 for supporting a storagecapability of large amounts of data is fitted with a flash memory device1210, in accordance with the present inventive concept. The flash memorydevice 1210 includes a nonvolatile memory device, in accordance withexemplary embodiments of the present inventive concept, as described inconnection with FIGS. 2A-2D and FIGS. 3A-3C. The memory card 1200includes a memory controller 1220 controlling all data exchanges betweena host and the flash memory device 1210.

A static random access memory (SRAM) 1221 is used as an operation memoryof a central processing unit (CPU) 1222. A host interface (I/F) 1223includes a data exchange protocol of a host connected to the memory card1200. An error correction code (ECC) block 1224 detects and corrects anerror included in data read from the flash memory device 1210 having amulti-bit characteristic. A memory interface 1225 interfaces with theflash memory device 1210. The central processing unit (CPU) 1222performs all control operations for data exchange of the memorycontroller 1220. Although not illustrated in the drawings, the memorycard 1200 may further include a read only memory (ROM) for storing codedata for interfacing with the host.

According to the flash memory device 1210, the memory card 1200 or thememory system of the present inventive concept, a memory system havinghigh reliability may be provided through a flash memory device having animproved erase characteristic of dummy cells. In particular, a flashmemory device of the present inventive concept may be provided to amemory system such as a solid state disc (SSD). In this case, a memorysystem having high reliability may be realized by cutting off a readerror caused by a dummy cell.

FIG. 6 is a block diagram illustrating an example of a data processingsystem including a nonvolatile memory device, in accordance withexemplary embodiments of the present inventive concept.

Referring to FIG. 6, a flash memory system 1310 of the present inventiveconcept is built in a data processing system 1300 such as a mobiledevice or a desktop computer. The data processing system 1300, inaccordance with the present inventive concept, includes the flash memorysystem 1310, a modem 1320, a central processing unit 1330, a RAM 1340and a user interface 1350 that are electrically connected to a systembus 1360. The flash memory system 1310 may be constituted in the same inthe same manner as the memory system or the flash memory systemdescribed above in connection with FIGS. 4 and 5. The flash memorysystem 1310 stores data processed by the central processing unit 1330 ordata received from the outside. In this case, the data processing system1300 can stably store large amounts of data in the flash memory system1310. As reliability increases, the flash memory system 1310 can reduceresources required in an error correction, thereby providing a dataexchange function of high speed to the data processing system 1300.Although not illustrated in the drawings, the data processing system1300 may further include an application chipset, an image signalprocessor (ISP), an input/output device or the like.

The flash memory device or the memory system in accordance with theinventive concept may be mounted by various types of packages such aspackage on package (PoP), ball grid array (BGA), chip scale package(CSP), plastic leaded chip carrier (PLCC), plastic dual in-line package(PDIP), die in waffle pack, die in wafer form, chip on board (COB),ceramic dual in-line package (CERDIP), plastic metric quad flat pack(MQFP), thin quad flat pack (TQFP), small outline integrated circuit(SOIC), shrink small outline package (SSOP), thin small outline package(TSOP), thin quad flat pack (TQFP), system in package (SIP), multi chippackage (MCP), wafer-level fabricated package (WFP) and wafer-levelprocessed stack package (WSP).

As described above, cell arrays are separated from each other so as toprovide a space for strapping of the common source region and/or thewell region and thereby word lines of a nonvolatile memory device havinga three dimensional structure can be formed without disconnection. Thus,semiconductor devices including a nonvolatile memory device having athree dimensional structure having high integration without increasing asize of a cell array may be provided.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe true spirit and scope of the inventive concept. Thus, to the maximumextent allowed by law, the scope of the inventive concept is to bedetermined by the broadest permissible interpretation of the followingclaims and their equivalents, and shall not be restricted or limited bythe foregoing detailed description.

1. A nonvolatile memory device comprising: cell arrays having aplurality of conductive patterns having a line shape three dimensionallyarranged on a semiconductor substrate, the cell arrays being separatedfrom one another; semiconductor patterns extending from thesemiconductor substrate to cross sidewalls of the conductive patterns;common source regions provided in the semiconductor substrate under alower portion of the semiconductor patterns in a direction in which theconductive patterns extend; a first impurity region provided in thesemiconductor substrate, wherein the first impurity region extends in adirection crossing the conductive patterns to electrically connect thecommon source regions; a first contact hole exposing a portion of thefirst impurity region between the separated cell arrays; and a contactplug filling the first contact hole.
 2. The nonvolatile memory device ofclaim 1, wherein a distance between the separated cell arrays is greaterthan a distance between separated conductive patterns.
 3. Thenonvolatile memory device of claim 1, wherein the first impurity regionhas the same conductivity type as the common source regions.
 4. Thenonvolatile memory device of claim 1, further comprising: a commonsource line provided in a direction in which the first impurity regionextends or in a direction crossing the first impurity region, whilebeing electrically connected to the contact plug.
 5. The nonvolatilememory device of claim 1, further comprising a second impurity regionwhich is separated from the first impurity region and provided betweenthe separated cell arrays, wherein the second impurity region has adifferent conductivity type from the first impurity region.
 6. Thenonvolatile memory device of claim 5, further comprising a secondcontact hole exposing a portion of the second impurity region.
 7. Anonvolatile memory device comprising: cell arrays having conductivepatterns of a plate shape that are sequentially stacked on asemiconductor substrate, the cell arrays being separated from oneanother; semiconductor patterns vertically extending from thesemiconductor substrate to penetrate the conductive patterns; a commonsource region provided on an entire surface of the semiconductorsubstrate; and a first contact hole exposing a portion of the commonsource region between the separated cell arrays.
 8. The nonvolatilememory device of claim 7, wherein each area of the conductive patternsdecreases as the conductive patterns extend in a stacked direction fromthe semiconductor substrate.
 9. The nonvolatile memory device of claim7, further comprising: a contact plug filling the first contact hole;and a common source line provided in a direction in which the cellarrays extend or in a direction crossing the cell arrays, while beingelectrically connected to the contact plug.